Multilevel verification environment of Angara interconnect
نویسندگان
چکیده
منابع مشابه
Design of FPGA Interconnect for Multilevel Metalization
How does multilevel metalization impact the design of FPGA interconnect? The availability of a growing number of metal layers presents the opportunity to use wiring in the thirddimension to reduce switch requirements. Unfortunately, traditional FPGA wiring schemes are not designed to exploit these additional metal layers. We introduce an alternate topology, based on Leighton’s Mesh-of-Trees, wh...
متن کاملMultilevel Interconnect Reliability on the Effects of Electro-thermomechanical Stresses
Cover photo: SEM micrograph showing extrusion of Al through passivation layer. Courtesy of John Vroemen from Philips Semiconductors Nijmegen. and assistant promoter Dr. Ir. C. Salm " Well done is better than well said " Benjamin Franklin In honor of my mother To Phong Lam and Ha Trung, … a very reliable wife and a wonderful son. Although this thesis has only one author's name, it has in fact be...
متن کاملA New Implementation of Multilevel Framework for Interconnect-Driven Floorplanning
for Interconnect-Driven Floorplanning Zheng Xu , Song Chen , Takeshi Yoshimura 1 and Yong Fang 2 1 Graduate School of Information, Production and Systems, Waseda University, Japan Hibikino2-6-317, Wakamatsu, Kitakyushu, Fukuoka 808-0135, Japan 2 School of Communication and Information Engineering, Shanghai University, China Yanchang Road 149, Shanghai 200072, China E-mail: [email protected]....
متن کاملThermal Scaling Analysis of Multilevel Cu/Low-k Interconnect Structures
This paper presents a comprehensive thermal scaling analysis of multilevel interconnects in deep nanometer scale CMOS technologies based on technological, structural, and material data from ITRS ’03 [1]. Numerical simulations have been performed using three-dimensional (3-D) electrothermal finite element methods (FEM), combined with accurate calculations of temperatureand size-dependent Cu resi...
متن کاملMultilevel Interconnect Technology for 45-nm Node CMOS LSIs
We have developed a novel porous low-k material called nano-clustering silica (NCS) which has a low dielectric constant (k = 2.25) and high mechanical strength (Young’s modulus E = 10 GPa), and established manufacturing technology for 45-nm node multilevel Cu/Full-NCS interconnects which use NCS in trench layers and via layers to reduce the resistance-capacitance (RC) delay. Our Cu/Full-NCS int...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Issues of radio electronics
سال: 2019
ISSN: 2218-5453
DOI: 10.21778/2218-5453-2019-10-28-36